Work

Effect of Hydrogen on Electrical Characteristics of AlGaN/GaN HEMTs After HTO Stress

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3438685

Authors: Chang Liu, Hongxia Liu, Yiqiang Chen, Zongqi Cai, Zhiyuan He, Ping Lai

Institutions: Xidian University, China Electronic Product Reliability and Environmental Test Institute, Ministry of Industry and Information Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1775887743, G2014358573, G4170341743, G8794544610

OpenAlex ID: W4401508011

FWCI: 0.869

Cites: 41

Cited by: 6

Related to: 10