Design and Numerical Analysis of a High Performance Α-fe2o3- Xsx (0001) Based Heterojunction Solar Cells With Zns Etl and Cui Htl Using Scaps-1d
Year: 2024
Type: article
Abstract: With several years of research on solar cell development, the energy conversion efficiency has seen a great improvement but it is still a big problem to design an eco-friendly cost-effective solar cell with high conversion efficiency.For eco-friendly earth-abundant solar cell fabrication, Sulphur-doped α-Fe2O3(0001) has offered a very promising absorber material.But defect-free fabrication is one of the most possible challenges during α-Fe2O3-xSx (0001)-based solar cell fabrication.The purpose of this research is to use the earth-abundant (Sulphur-doped) α-Fe2O3-xSx (0001) material as a solar absorber and to see how the efficiency of the newly proposed ITO/ZnS/α-Fe2O3-xSx(0001)/CuI structure is affected by CuI as an HTL material and ZnS as an ETL material.Besides, Cu, Au, Ni are used as a back metal contact and Mo as a front-contact material to see their impact on solar cell performances.In this research work, we simulate the photovoltaic (PV) efficiency using SCAPS-1D software.During the simulation process, we implanted defect densities (Nt) to each layer as well as the interface between the absorber layer and other adjacent layers.CuI HTL and ZnS ETL were found to play a promising role in minimizing non-radiative recombination at the interfaces by establishing a more auspicious band alignment with the absorber substrate.The value of layer parameters (such as thickness, NA, ND, Nt), Operating temperature, metalwork function of back-contact, etc. is varied with a decent range to find out the optimum PV performance of the proposed structure.From the simulation study of the proposed cell using the SCAPS-1D simulator, it was discovered that a lower acceptor concentration (NA) and comparatively thicker absorber layer performed better.For better results, a thick HTL layer and a very thin ETL layer with a high carrier concentration are also needed.In this work, the simulated conversion efficiency (η) 18% to 37.2378% was obtained in the case of best suited Ni as back contact metal depending on the absorber defect.CuI and ZnS are required to become HTL and ETL, respectively, with the possible lowest absorber defect, for fabricating low-cost, high-efficiency, and non-toxic sulfur-doped α-Fe2O3-xSx (0001)-based heterojunction solar cells, according to the findings of this report.
Language: English
Field: Energy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4401508195