Perspective: Entropy-stabilized oxide memristors
Year: 2024
Type: article
Abstract: A memristor array has emerged as a potential computing hardware for artificial intelligence (AI). It has an inherent memory effect that allows information storage in the form of easily programmable electrical conductance, making it suitable for efficient data processing without shuttling of data between the processor and memory. To realize its full potential for AI applications, fine-tuning of internal device dynamics is required to implement a network system that employs dynamic functions. Here, we provide a perspective on multicationic entropy-stabilized oxides as a widely tunable materials system for memristor applications. We highlight the potential for efficient data processing in machine learning tasks enabled by the implementation of “task specific” neural networks that derive from this material tunability.
Source: Applied Physics Letters
DOI: 10.1063/5.0216429
Institutions: Oregon State University, University of Michigan
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Funder: National Science Foundation
OpenAlex ID: W4401515117
