Work

An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties

Year: 2024

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga 2 O 3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga 2 O 3 films, reducing it from 4.2 × 10 6 Ω cm to 2 × 10 5 Ω cm for the 2.5 at. % Sn:Ga 2 O 3 compared to the nominally undoped Ga 2 O 3 .

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c00973

Authors: Ruizhe Chen, Sanjayan Sathasivam, Joanna Borowiec, Claire J Carmalt

Institutions: University College London, London South Bank University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funders: London South Bank University, Engineering and Physical Sciences Research Council