Work

Redox gating-induced modulation of charge carrier density and lattice expansion in LaNiO3 thin films

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0217899

Authors: Hui Cao, Changjiang Liu, Dillon D. Fong, Anand Bhattacharya, Matthew V. Tirrell, Hua Zhou, Wei Chen

Institutions: Argonne National Laboratory, University at Buffalo, State University of New York, University of Chicago, Advanced Photon Source

Language: English

Topic: Electronic and Structural Properties of Oxides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Office of Science, Basic Energy Sciences

Awards: G5266530286, G993149817

OpenAlex ID: W4401526972

FWCI: 0.095

Cites: 42

Cited by: 1

Related to: 10