Capacitance reduction in AlGaN/GaN heterojunction diodes through thermally oxidized NiO anode
Year: 2024
Type: article
Abstract: In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed. NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two-dimensional electron gas in the anode region of the device. Combined with the etching-free technology, the damage caused by etching the AlGaN barrier layer is successfully avoided. The capacitance of the device was reduced from 28 pF mm−1 (Schottky) to 966 fF/mm (NiO) which reduced 97%. At the same time the NiO anode devices with a reverse current leakage of ~10−8 A/mm@−100V achieved a high current ON/OFF ratio of ~10-8. NiO not only reduces the capacitance and leakage of the device but also enhances its anti-collapse ability. Without using the structure of field plates, the breakdown voltage of the device was also increased compared with the Schottky diode.
Authors: Qiuen Li, Xuanwu Kang, Hao Wu, Rikang Zhao, Yingkui Zheng, Hengyu Shang, Xinyu Liu, Chengjun Huang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4401528286