Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET
Year: 2024
Type: article
Abstract: In this study, we attempted to fabricate N-polar GaN/AlGaN/AlN heterostructure FET by changing the thickness of the AlN layer. An Al-polar tiny-pit AlN layer and a polarity inversion method were used to grow N-polar AlN on vicinal sapphire via the metal-organic vapor phase epitaxy. The samples with an AlN thickness of up to 3.4 μm exhibited a crack-free surface. Additionally, the twist component of the crystal quality improved with an increasing AlN thickness. Consequently, the mobility, sheet conductivity, and surface flatness improved. The FET fabricated from the sample with a thicker AlN layer achieved a higher drain current of 279 mA mm−1 at a gate bias of V G = 3 V.
Authors: Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada, Yoichi Yamada
Institution: Yamaguchi University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4401528936