Work

All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3443107

Authors: Junhou Cao, Chenlu Wang, Lei Huang, Tuanzhuang Wu, Hao Fu, Zhaoxiang Wei, Zhaoxu Song, Shaohong Li, Jiaxing Wei, Siyang Liu, Weifeng Sun

Institution: Southeast University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities, Transformation Program of Scientific and Technological Achievements of Jiangsu Province

Awards: G238497530, G2847445965, G5620386573

OpenAlex ID: W4401536946

FWCI: 0.312

Cites: 22

Cited by: 3

Related to: 10