Work

On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga2O3

Year: 2024

Type: article

Abstract: We have applied positron annihilation spectroscopy to study the vacancy-type defects in β-Ga2O3 single crystals. The three different types of crystals were prepared by Czochralski and edge-defined film-fed growth and doped with Fe, Mg, and Sn for semi-insulating and n-type characteristics. The crystals were also subjected to 6-MeV proton irradiation for controlled introduction of mono-vacancy defects. Positron lifetime and the details of the anisotropy of the Doppler broadening signals were measured as a function of temperature, and the results were compared with the annihilation signals predicted by theoretical calculations. We find Ga vacancies in all three basic split Ga vacancy configurations to dominate the positron data in the as-grown crystals. In contrast, unrelaxed Ga vacancies are found as the main defect introduced by the irradiation.

Source: Journal of Applied Physics

DOI: 10.1063/5.0205933

Authors: Iuliia Zhelezova, Ilja Makkonen, Filip Tuomisto

Institutions: University of Helsinki, Helsinki Institute of Physics

Language: English

Topic: Muon and positron interactions and applications

Subfield: Mechanics of Materials

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funders: Suomen Kulttuurirahasto, Väisälän Rahasto, Air Force Office of Scientific Research