Controlling Oxygen Vacancy Content by Varying Calcination Temperature to Enhance the Gas Sensing Performance of BiVO4 Material
Year: 2024
Type: article
Abstract: Compared to gas sensors based on single metal oxide, gas sensors based on binary metal oxide semiconductors (MOS) offer a rich variety of structural types and hold great potential for excellent selectivity. Inspired by this, we synthesized BiVO4 powder through a stepwise reaction combining calcination with hydrothermal bath and investigated the influence of different calcination temperatures on its gas sensitivity performance. Our study revealed that BiVO4-600 exhibited optimal TEA gas sensing behavior at 225 °C, showing high response values (Ra/Rg = 43.4) and fast response/recovery times (15 s/52 s). Additionally, the sensor displayed high stability, repeatability, and exceptional selectivity. Preliminary research indicates that calcination temperature induces changes in the oxygen vacancy content of BiVO4, thus affecting its sensing performance.
Authors: Si-Qi Jiao, Yu-Feng Liu, Xiao-Hong Zheng, Cheng Zhang, Xiao-Rui Wang
Institution: Shanghai Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $1,855
Award: G2397027739
OpenAlex ID: W4401585414
