Work

A Perspective on tellurium-based optoelectronics

Year: 2024

Type: article

Abstract: Tellurium (Te) has been rediscovered as an appealing p-type van der Waals semiconductor for constructing various advanced devices. Its unique crystal structure of stacking of one-dimensional molecular chains endows it with many intriguing properties including high hole mobilities at room temperature, thickness-dependent bandgap covering short-wave infrared and mid-wave infrared region, thermoelectric properties, and considerable air stability. These attractive features encourage it to be exploited in designing a wide variety of optoelectronics, especially infrared photodetectors. In this Perspective, we highlight the important recent progress of optoelectronics enabled by Te nanostructures, which constitutes the scope of photoconductive, photovoltaic, photothermoelectric photodetectors, large-scale photodetector array, and optoelectronic memory devices. Prior to that, we give a brief overview of basic optoelectronic-related properties of Te to provide readers with the knowledge foundation and imaginative space for subsequent device design. Finally, we provide our personal insight on the challenges and future directions of this field, with the intention to inspire more revolutionary developments in Te-based optoelectronics.

Source: Applied Physics Letters

DOI: 10.1063/5.0224623

Authors: Jiajia Zha, Jingyi Tong, Haoxin Huang, Yunpeng Xia, Dechen Dong, Chaoliang Tan

Institutions: University of Hong Kong, City University of Hong Kong

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Natural Science Foundation of China, Young Scientists Fund

Awards: G1233041001, G4173137979