Work

A Gate Open-Circuit Failure Detection Method of SiC MOSFETs Based on Internal Gate State Extraction

Year: 2024

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3444464

Authors: Shengxu Yu, Zhiqiang Wang, Lingqi Tan, Jingwu Qin, Da Zhou, Yunchan Wu, Yimin Zhou, Guoqing Xin, Xiaojie Shi

Institutions: Huazhong University of Science and Technology, Guangdong Power Grid Company (China), China Southern Power Grid (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G702100997

OpenAlex ID: W4401634123

FWCI: 0.52

Cites: 34

Cited by: 5

Related to: 10