Work

3-D Fully Coupled Electromagnetic Field Modeling and Characterization of SiC MOSFET Switching Transients

Year: 2024

Type: article

Source: IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI: 10.1109/jestpe.2024.3444809

Authors: Shengyu Jia, Bochen Shi, Han Xu, Wenhao Xie, Yikang Xiao, Zhengming Zhao

Institution: Tsinghua University

Language: English

Topic: Electromagnetic Compatibility and Noise Suppression

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1172969674

OpenAlex ID: W4401634893

FWCI:

Cites: 51

Cited by:

Related to: 10