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Year: 2024

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2024.3435088

Authors: Dan Fleetwood, Heather Quinn, Steven Moss, Vincent Goiffon, Philippe Paillet, Lili Ding, Daniel Loveless, Jeffrey Black, Federico Faccio, Janet Barth, Cui Meng, Enxia Zhang

Institutions: Vanderbilt University, Los Alamos National Laboratory, The Aerospace Corporation, Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Northwest Institute of Nuclear Technology, Indiana University, Sandia National Laboratories, European Organization for Nuclear Research, Goddard Space Flight Center, Zhejiang University, University of Central Florida

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4401635018

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