Work

Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)2

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0003775

Authors: Amnon Rothman, Seunggi Seo, Jacob Woodruff, Hyungjun Kim, Stacey F. Bent

Institutions: Stanford University, Yonsei University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy

Awards: NNCI: nano@stanford, TAS::89 0222::TAS; ER46731; STUDIES OF SURFACE REACTION MECHANISMS IN ATOMIC LAYER DEPOSITION; PI- STACEY BENT

OpenAlex ID: W4401638125

FWCI: 0.825

Cites: 48

Cited by: 8

Related to: 10