Work

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing

Year: 2024

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.4c02142

Authors: Kangli Xu, Tianyu Wang, Chen Lu, Yifan Song, Yongkai Liu, Jiajie Yu, Yinchi Liu, Zhenhai Li, Jialin Meng, Hao Zhu, Qing-Qing Sun, David Wei Zhang, Lin Chen

Institutions: Fudan University, Shandong University, Chinese Academy of Sciences, Suzhou Research Institute, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Science and Technology Commission of Shanghai Municipality, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China

Awards: G1023562484, G1145064305, G2269629617, G3493594101, G4676113648, G5711473296, G5814151, G7664370937, G8911504526

OpenAlex ID: W4401647215

FWCI: 2.991

Cites: 70

Cited by: 29

Related to: 10