Work

Performance comparison of flip-chip blue-light microLEDs with various passivation

Year: 2024

Type: article

Abstract: In this study, arrays of μLEDs in four different sizes (5 × 5 μm 2 , 10 × 10 μm 2 , 25 × 25 μm 2 , 50 × 50 μm 2 ) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO 2 deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating Al 2 O 3 deposited by atomic layer deposition (ALD) beneath the SiO 2 layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of μLEDs in the 5 μm chip-sized μLED arrays. Furthermore, higher light output power of μLEDs was observed in each chip-sized μLED array with double layers passivation. Particularly, the highest EQE value 21.9% of μLEDs array with 5 μm × 5 μm chip size was achieved with the double-layers passivation. The EQE value of μLEDs array was improved by 4.4 times by introducing the double-layers passivation as compared with that of μLEDs array with single layer passivation. Finally, more uniform light emission patterns were observed in the μLEDs with 5 μm × 5 μm chip size fabricated by double-layer passivation process using ImageJ software.

Source: Discover Nano

DOI: 10.1186/s11671-024-04078-6

Authors: Yu-Hsuan Hsu, Xin-Dai Lin, Yi-Hsin Lin, Dong-Sing Wuu, Ray-Hua Horng

Institutions: National Yang Ming Chiao Tung University, National Chi Nan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,990

Funders: Shanghai Educational Development Foundation, Industrial Technology Research Institute, Ministry of Education, India, National Science and Technology Council