Work

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)

Year: 2024

Type: article

Abstract: Inside Front Cover In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. The observed behavior is attributed to different surface reactivity. It can be applied into organic light-emitting diode tablets and notebooks.

Source: Small Methods

DOI: 10.1002/smtd.202470043

Authors: Seong Hun Yoon, Jae Hun Cho, Iaan Cho, Min Jae Kim, Jae Seok Hur, Seon Woong Bang, Heung Jo Lee, Jong Uk Bae, Jiyoung Kim, Bonggeun Shong, Jae Kyeong Jeong

Institutions: Hanyang University, Hongik University, LG (South Korea), The University of Texas at Dallas

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4401668813

FWCI: 0.208

Cites:

Cited by: 2

Related to: 10