3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM With Leakage Saving Circuits in 3-nm FinFET for HPC Applications
Year: 2024
Type: article
Institution: Taiwan Semiconductor Manufacturing Company (Taiwan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4401687401