Work

Si-implantation for low ohmic contact resistances in RF GaN HEMTs

Year: 2024

Type: article

Abstract: In this work, Si implantation and activation for lowering the ohmic contact resistance (R c) of mm-wave GaN HEMTs has been investigated. Various combinations of annealing temperature/duration and implantation doses were tested. Dopant activation was performed using a modified procedure in an MOCVD tool, involving fast temperature ramping and annealing the samples for 8 min at 1150 °C. Thereby, ∼0.02 ± 0.01 Ω mm contact resistance was achieved on a fully doped region and ∼0.1 ± 0.02 Ω mm when only the source and drain contact region was n-type doped. For comparison, a well-established alloyed Ti/Al/Ni/Au ohmic contact scheme without implantation, was used as reference resulting in an average R c ∼ 0.34 ± 0.12 Ω mm on the same wafer. Besides the three times lowered contact resistance the implanted contacts also showed a significantly improved on-wafer homogeneity.

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad70d5

Authors: H Yazdani, F Brunner, A Thies, H J Würfl, O Hilt

Institution: Ferdinand-Braun-Institut

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,165

Funders: European Space Agency, Deutsche Forschungsgemeinschaft, Forschungsfabrik Mikroelektronik Deutschland