Work

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Year: 2024

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2024.3445351

Authors: Shuhao Hou, Shangli Dong, Jianqun Yang, Zhongli Liu, Enhao Guan, Jinhua Liu, Gang Lin, Guojian Shao, Yubao Zhang, Jicheng Jiang, Xingji Li

Institutions: Harbin Institute of Technology, The 28th Research Institute of China Electronics Technology Group Corporation

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Academy of Scientific Research and Technology

Award: G405848522

OpenAlex ID: W4401692281

FWCI: 0.208

Cites: 50

Cited by: 2

Related to: 10