Work

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Year: 2024

Type: article

Source: IEEE Transactions on Microwave Theory and Techniques

DOI: 10.1109/tmtt.2024.3441541

Authors: Chunyu Li, Tiancheng Zhang, Huaguang Bao, Aiqiang Cheng, Dunjun Chen, Chao-Fu Wang, Dazhi Ding, Douglas H. Werner

Institutions: Nanjing University of Science and Technology, The 28th Research Institute of China Electronics Technology Group Corporation, Nanjing University, National University of Singapore, Pennsylvania State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Laboratory Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G1803890653, G2185677556, G3171127851, G3750661210, G5367492541, G5600218468, G6028891641, G6714861560

OpenAlex ID: W4401718302

FWCI: 2.23

Cites: 39

Cited by: 15

Related to: 10