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Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. 123, 172102 (2023)]

Year: 2024

Type: article

Abstract: This is a related article to: Infrared dielectric function of GaAs 1-x P x semiconductor alloys near the reststrahlen bands Articles You May Be Interested InInfrared dielectric function of GaAs 1-x P x semiconductor alloys near the reststrahlen bands Appl.Phys.Lett.(

Source: Applied Physics Letters

DOI: 10.1063/5.0213520

Authors: A. Elmahjoubi, T. Alhaddad, A. V. Postnikov, O. Pagès

Institutions: Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes, Université de Lorraine

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: Université de Lorraine, Agence Nationale de la Recherche, Uniwersytet Mikolaja Kopernika w Toruniu