Work

Alloy engineered cryotronically stable polymorphic strained photo detector functionalized by palladium enriched tin diselenide nanosheets

Year: 2024

Type: article

Abstract: Scientists experience formidability in developing an advanced materials capable to withstand extreme environmental circumstances without sacrificing its fundamental properties. In this realm, solid-state devices utilizing 'metal dichalcogenide' materials offer significant advantages for cryogenic purposes, but rarely explored. In this study, thin film photodetectors (TFPDs) based on meta-materials of Pd x Sn 1− x Se 2 ( x =0.0, 0.2, 0.5) nanosheets are introduced. Nanosheets are extracted from bulk via sonochemical exfoliation to fabricate TFPDs. Novel material Pd 0.5 Sn 0.5 Se 2 grown by 50 % palladium enrichment in SnSe 2 exhibits polymorphism comprising structural duality of hexagonal-orthorhombic phases. TFPDs based on Pd x Sn 1− x Se 2 ( x =0.0, 0.2, 0.5) nanosheets display substantial photoresponse in which TFPD functionalised by Pd 0.5 Sn 0.5 Se 2 nanosheets portrays superior photodetection. Raman peak demonstrates notable thermal-sensing through blue-shifting and sharpening under cryogenic-temperatures. Surprisingly, Pd 0.5 Sn 0.5 Se 2 nanosheets based TFPD reveals considerable photodetection, achieving 0.52 mAW −1 responsivity at 10 K cryogenic-temperature. To the best of our knowledge, present investigation surpasses previous reports, highlighting a thin film-based photo detector that represents exceptional responsivity at 10 K cryogenic-temperature reported by us for the first time. As an outcome of present study, a TFPD based on Pd 0.5 Sn 0.5 Se 2 nanosheets emerges as advanced cryotronic material for designing next-generation cryogenic photonic devices due to its higher steadiness, excellent reproducibility and operational efficiency at cryogenic-temperature of 10 K.

Source: Journal of Alloys and Compounds

DOI: 10.1016/j.jallcom.2024.176128