Controlling Memristive Switching Behavior of Sr2TiO4 Thin Films by Miscut Nb:SrTiO3 Substrate
Year: 2024
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Local redox processes at the defect states in oxides are significantly affected by the presence of oxygen vacancies in the crystal lattice of the oxide materials. In this study, the effect of oxygen vacancy formation in Sr 2 TiO 4 crystal structure is investigated by performing the resistive switching experiments as well as synaptic characterizations through the variation of the miscut angles of the substrates. On the basis of the switching performance, a clear bipolar resistive switching and excellent memristor properties are shown for the sample grown on a low (i.e., 1°) miscut angle substrate. However, for the sample grown on high (i.e., 2°) miscut angle substrate, the film becomes (i) two times more conducting, (ii) 1 order of magnitude lower filament resistance, and (iii) at least five times narrower current–voltage hysteresis window compared with the sample grown on 1° miscut angle. The statistical analysis and conduction mechanism suggest that this is due to the incomplete disruption of the conducting filament. These results propose that the local redox process in the film is correlated to the oxygen vacancy migration induced by the substrates. The work provides an insight into the mechanism of switching filament formation and rupture that is important for future resistive-switching devices.
Source: ACS Applied Electronic Materials
Authors: Fran Kurnia, Nagarajan Valanoor
Institutions: UNSW Sydney, Technical University of Munich
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
OpenAlex ID: W4401733596