Work

Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

Year: 2024

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.4c06159

Authors: Seokjin Ko, Dongryul Lee, Jeongmin Kim, Jeongmin Kim, Chang-Koo Kim, Jihyun Kim, Jihyun Kim

Institutions: Seoul National University, Ajou University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Defense Acquisition Program Administration

Awards: G4396182776, G535086096

OpenAlex ID: W4401733857

FWCI: 0.663

Cites: 59

Cited by: 7

Related to: 10