Work

Relation of V/III ratio of AlN interlayer with the polarity of nitride

Year: 2024

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/ad71b2

Authors: Zhaole 兆乐 Su 苏, Yangfeng 阳锋 Li 李, Xiaotao 小涛 Hu 胡, Yimeng 祎萌 Song 宋, Zhen 震 Deng 邓, Ziguang 紫光 Ma 马, Chunhua 春花 Du 杜, Wenxin 文新 Wang 王, Haiqiang 海强 Jia 贾, Yang 洋 Jiang 江, Hong 弘 Chen 陈

Institutions: Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, University of Science and Technology Beijing, Yangtze River Delta Physics Research Center (China), Songshan Lake Materials Laboratory

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4401746745

FWCI: 0.149

Cites: 16

Cited by: 1

Related to: 10