Assessing DC and RF Reliability of SiGe HBTs Stress-Engineered Using Dummy BEOL Layers
Year: 2024
Type: article
Institution: Georgia Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
Award: G2301255353
OpenAlex ID: W4401749126