Work

Performance Comparisons of GaN Vertical Transistors With Sidewalls Treated by TMAH and H₃PO₄ Solutions

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3448196

Authors: Yu-Chuan Chu, Chih-Kang Chang, Zhi-Xiang Zhang, Anuj Chauhan, Yi-Ta Chung, Tien-Yu Wang, Miin-Jang Chen, Wei-Chi Lai, Jian-Jang Huang

Institutions: National Taiwan University, National Cheng Kung University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Award: G2341024696

OpenAlex ID: W4401749279

FWCI: 0.297

Cites: 21

Cited by: 2

Related to: 10