Work

Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3448378

Authors: Mamidala Karthik Ram, Hannes Dahlberg, Lars-Erik Wernersson

Institution: Lund University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Research Council

Award: G5218103883

OpenAlex ID: W4401749345

FWCI: 1.54

Cites: 29

Cited by: 15

Related to: 10