Work

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0003818

Authors: Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton

Institutions: University of Florida, Seoul National University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, National Research Foundation of Korea, Defense Threat Reduction Agency, Defense Acquisition Program Administration, NASA Earth Science Technology Office

Awards: G2325657313, G2494698946, G2572957395, G4332557591, G535086096, G5442972664, G772299097, G7878941583

OpenAlex ID: W4401782854

FWCI: 0.144

Cites: 46

Cited by: 1

Related to: 10