Work

MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/5.0202640

Authors: Yu-Xuan Zeng, Xi-Rui Wang, Ruo-Yun Yang, Wei Huang, Lei Yang, Hong-Ping Ma, Qing-Chun Zhang

Institutions: Fudan University, Huawei Technologies (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Innovation Plan Of Shanghai Science and Technology Commission

Awards: G249392647, G6752143353, G838095216, G8987701284

OpenAlex ID: W4401816846

FWCI: 1.026

Cites: 33

Cited by: 10

Related to: 10