Work

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0208759

Authors: B. G. Hagar, E. L. Routh, M. Abdelhamid, P. C. Colter, J. Muth, S. M. Bedair

Institution: North Carolina State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Awards: NNCI: North Carolina Research Triangle Nanotechnology Network (RTNN), Engineering Strain in InGaN/GaN Multiple Quantum Wells for Improved Optical Devices, EAGER: III-Nitride Solar Cells

OpenAlex ID: W4401824868

FWCI: 0.145

Cites: 36

Cited by: 1

Related to: 10