Work

Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations

Year: 2024

Type: article

Abstract: The high-speed switching capabilities of wide bandgap (WBG) power devices have posed challenges in accurately evaluating their dynamic characteristics, primarily due to the increasing influence of parasitic components in switching test circuits. To address this issue, we investigated the impact of parasitics by conducting dynamic tests and schematic-level transient simulation on a half-bridge switching circuit incorporating SiC MOSFETs. This comparative analysis identified specific parasitic components responsible for undesirable behaviors such as spikes and ringing in the switching waveform. Our findings provide insights into which parasitic components in the test circuit are critical for the accurate dynamic characterization of SiC MOSFETs.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-4ygp53

Authors: Takamasa Arai, Ryo Takeda, Tom Neville, Mike Hawes

Institutions: Keysight Technologies (Singapore), Keysight Technologies (United States), Keysight Technologies (Austria), Keysight Technologies (United Kingdom)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401826718

FWCI:

Cites: 7

Cited by:

Related to: 10