Work

Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs

Year: 2024

Type: article

Abstract: The short-circuit withstand time and on-resistance trade-off is investigated in 4H-SiC Power MOSFETs. We compare the static and short circuit withstand time results along with JFET width dependency and PWELL doping variation of MOSFET. We present that smaller Rds,on by wider JFET width and lighter doped PWELL results in worse short circuit withstand time.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-4eg9rl

Authors: Jeff Kim, Brian Fetzer, Shadi Sabri, Brett Hull, Sei Hyung Ryu

Institution: Wolfspeed, Inc. (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401826909

FWCI: 0.308

Cites: 3

Cited by: 3

Related to: 10