Work

1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On

Year: 2024

Type: article

Abstract: With the capability to switch at high speed, there are important concerns about Parasitic Turn-On (PTO) when using SiC MOSFETs in switching applications with fundamental half-bridge configuration [1]. In this work, we present 1200V SiC planar MOSFETs with low specific ON-resistance (Rsp), fast switching characteristics and high immunity to PTO. The PTO immunity is verified by experimental comparison to several commercially available SiC MOSFETs.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-f0fpmb

Authors: Thanh Toan Pham, Jimmy Franchi, Soo Hyun Kang, Kyeong Seok Park, Doo Jin Choi, Martin Domeij

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: hybrid

OpenAlex ID: W4401827210

FWCI:

Cites: 5

Cited by:

Related to: 10