Work

SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations

Year: 2024

Type: article

Abstract: In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-lhri4m

Authors: Luca Maresca, Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Michele Riccio, Giovanni Breglio, Andrei Mihaila, Gianpaolo Romano, Stephan Wirths, Lars Knoll, Andrea Irace

Institution: University of Naples Federico II

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401827941

FWCI: 0.308

Cites: 4

Cited by: 3

Related to: 10