Work

A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism

Year: 2024

Type: article

Abstract: In this paper, a simple compact model for the static behavior of SiC MPS diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to describe the undesired snapback mechanism likely to occur in unoptimized high-voltage MPS structures with narrow width of the PiN portion and/or very thick drift layer; in particular, the model accounts for the snapback mechanism both as the cell extension varies and as individual portions of Schottky and PiN vary. Sentaurus TCAD simulations of a 10-kV MPS diode are used as a reference for the calibration of the model parameters and accuracy verification.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-b9imzl

Authors: Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro, Andrea Irace

Institution: University of Naples Federico II

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401828332

FWCI: 0.104

Cites: 12

Cited by: 1

Related to: 10