Work

On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs

Year: 2024

Type: article

Abstract: Under short-circuit (SC) testing SiC MOSFETs exhibit an exceptional increase of gate current (100’s mA) which is not observed in their Si counterparts. Electro-thermal TCAD simulations are capable to accurately mimic all the details of measured gate current waveforms (iG) by capturing multiple physical mechanisms. One of these mechanisms is the thermionic or Schottky emission effect occurring at extreme temperatures (>1300K) for relatively thick gate oxides (>40nm). For the first time, it is proven that TCAD tunneling models, recommended for very thin oxides (<3nm), are suitable to reproduce the thermionic effect and predict iG in SiC MOSFETs under SC test.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-hwcw4i

Authors: Jaume Roig, Sara Kochoska, Basil Vlachakis, Jimmy Franchi, Thanh Toan Pham

Institution: ON Semiconductor (Belgium)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401828526

FWCI: 0.103

Cites: 16

Cited by: 2

Related to: 10