Work

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs

Year: 2024

Type: article

Abstract: By using 4H-SiC packaged Charge-Balanced (CB) MOSFET, we have experimentally demonstrated a 3.3kV 4H-SiC common-drain bidirectional (BD) CB power MOSFET and measured its static and dynamic characteristics compared to its unidirectional counterpart. We show that the BD CB MOSFET conducts and blocks at the first and third quadrants with the appropriate gate bias with an on-state resistance double its unidirectional counterpart, while its switching energies are 12 (19) and 34 (12) mJ/cm2for BD CB MOSFET (UD CB MOSFET).

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-bgtrk1

Authors: Mohamed Torky, Zhaowen He, Collin Hitchcock, Reza Ghandi, Stacey Kennerly, T. Paul Chow

Institutions: Rensselaer Polytechnic Institute, GE Global Research (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

OpenAlex ID: W4401828691