Work

Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures

Year: 2024

Type: article

Abstract: This research investigates the static and dynamic characteristics of 4H-Silicon Carbide (SiC) MOSFETs with different gate structures: planar (Device A), one-side shielded trench (Device B), and double trench (Device C). We analyze threshold voltage, on-state resistance, transconductance, gate-to-source capacitances, and reverse transfer/miller capacitances with gate bias. Additionally, non-linear charges, including input charge, miller plateau, and total gate charge, are examined. Switching losses are assessed over a temperature range of 25° C to 125° C. Our findings reveal distinct performance differences, offering valuable insights for optimizing SiC MOSFETs in electric vehicle applications.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-9zwfjb

Authors: Vudumula Pavan Reddy, Umesh Chand, Lakshmi Kanta Bera, Calvin Hung Ming Chua, Navab Singh, Surasit Chung

Institutions: Agency for Science, Technology and Research, Institute of Microelectronics

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401829284

FWCI:

Cites: 3

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Related to: 10