Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
Year: 2024
Type: article
Abstract: This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P+ rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure.
DOI: 10.4028/p-d65yun
Authors: Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Camille Sonneville, Pierre Brosselard, Gabrielle Moulin, Luong Viet Phung, Philippe Godignon
Institutions: Lyon 1 Université, Université Grenoble Alpes
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4401835357
