Year: 2024
Type: article
Abstract: SiC MOSFETs still suffers from some open issues, such as the high density of defects existing at the SiC/ SiO2 interface. In order to characterize such interface, a non-destructive investigation technique should be employed. In this work, we investigate the measurement of Gate capacitance with biased Drain. More in detail, the effect of frequency on such curves is considered. The analysis is performed using both in experimental setup and numerical framework. Experimental and numerical results both exhibit a sharp capacitance peak in the inversion region which reduces its height as frequency increases.
DOI: 10.4028/p-o37qxb
Institution: University of Naples Federico II
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4401835369