Work

Optimized Trench IGBT With Dummy Gate and Buried n-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3428449

Authors: Jinping Zhang, Yazheng Liu, Haonan Deng, Kang Wang, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: Guangdong Provincial Applied Science and Technology Research and Development Program, Zigong Science and Technology Program of China

Awards: G4770915190, G7794855169

OpenAlex ID: W4401870932

FWCI: 1.131

Cites: 22

Cited by: 11

Related to: 10