Work

Modeling and Analysis of Monitoring Gate-Oxide Degradation of SiC Power MOSFETs in Circuit by the Fingerprints of Voltage Switching Transient

Year: 2024

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3446241

Authors: Y. Q. Chen, B. Hou, Y. H. Lin

Institutions: Ministry of Industry and Information Technology, South China University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2014358573

OpenAlex ID: W4401871014

FWCI: 0.729

Cites: 29

Cited by: 7

Related to: 10