Work

Hourglass transistor: An alternative and improved MOS structure robust to total ionization dose radiation

Year: 2024

Type: article

Abstract: This paper presents a novel MOSFET layout named the ”hourglass transistor”, aimed to improve its behavior under Total Ionizing Dose (TID) effects. The new radiation-tolerant device is based on augmenting parasitic channel resistance, alteration of the electric field by the longitudinal corner effect (LCE), and reducing channel resistance within the central gate region. The radiation-robust MOS structure design was implemented in a 130 nm CMOS bulk process and its performance was analyzed through simulations using 3D physical models. The proposed hourglass transistor was compared with rectangular, diamond, and dog bone devices, showing a reduction in the post-radiation Ioff current of 8.77, 4.6 and 1.85 times, respectively; and a pre-radiation normalized saturation current of 2.87, 1.04 and 1.58 times greater with an increase of 4.84, 1 and 2.47 times the gate area, respectively.

Source: Microelectronics Journal

DOI: 10.1016/j.mejo.2024.106391

Authors: Carlos Alfredo Pelcastre Ortega, Mónico Linares Aranda

Institution: National Institute of Astrophysics, Optics and Electronics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,390

Funder: Consejo Nacional de Ciencia y Tecnología