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The interlayer twist effectively regulates interlayer excitons in InSe/Sb van der Waals heterostructure

Year: 2024
Type: article
Abstract: The interlayer twist angle endows a new degree of freedom to manipulate the spatially separated interlayer excitons in van der Waals (vdWs) heterostructures. Herein, we find that the band-edge Γ-Γ interlayer excitation directly forms interlayer exciton in InSe/Sb heterostructure, different from that of transition metal dichalcogenides (TMDs) heterostructures in two-step processes by intralayer excitation and transfer. By tuning the interlayer coupling and breathing vibrational modes associated with the Γ-Γ photoexcitation, the interlayer twist can significantly adjust the excitation peak position and lifetime of recombination. The interlayer excitation peak in InSe/Sb heterostructure can shift ~ 400 meV, and the interlayer exciton lifetime varies in hundreds of nanoseconds as a periodic function of the twist angle (0°-60°). This work enriches the understanding of interlayer exciton formation and facilitates the artificial excitonic engineering of vdWs heterostructures.
DOI: 10.1038/s41524-024-01384-6
Authors: Anqi Shi, Ruilin Guan, Jin Lv, Zifan Niu, Wenxia Zhang, Shiyan Wang, Xiuyun Zhang, Bing Wang, Xianghong Niu
Institutions: Nanjing University of Posts and Telecommunications, Shanxi Normal University, Chongqing University of Posts and Telecommunications, Yangzhou University, Henan University, Southeast University
Language: English
Open Access status: gold
Estimated APC paid: $3,290
Funders: Six Talent Climax Foundation of Jiangsu, National Natural Science Foundation of China, China Postdoctoral Science Foundation, Government of Jiangsu Province, Natural Science Foundation of Shanxi Province, Southeast University
Awards: G4210964001, G4430386142, G6181266925, G6572653754, G7515337788, G8551179955
OpenAlex ID: W4401881825
FWCI: 1.917
Cites: 54
Cited by: 20
Related to: 10