Work

Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/5.0218780

Authors: Niloy Chandra Saha, Tomoki Shiratsuchi, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu

Institutions: Saga University, National Institute of Technology, Kure College

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Awards: Control of nanostructure of directly bonded Si/diamond interfaces using annealing, G6993144827, Diamond Heteroepitaxial Growth on Sapphire and SiC Substrates and its Application to MOSFET

OpenAlex ID: W4401886903

FWCI: 0.288

Cites: 18

Cited by: 3

Related to: 10