Work

Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors

Year: 2024

Type: article

Source: physica status solidi (b)

DOI: 10.1002/pssb.202400055

Authors: Yang Dai, Ruosong Yuan, Yukun Li, Leiyu Gao, Yiting Zhang, Yiting Zhang, Pengzhan Wang, Yunyao Zhang, Yunyao Zhang, Xiaoyi Lei, Han Zhang, Wu Zhao

Institutions: Northwest University, Xi’an University of Posts and Telecommunications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: G1036581151, G2122263488, G6286061784

OpenAlex ID: W4401886922

FWCI: 0.289

Cites: 20

Cited by: 2

Related to: 10