Work

Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements

Year: 2024

Type: article

Abstract: In this study we analyzed the physical mechanisms governing time-dependent dielectric breakdown (TDDB) and we used TDDB physical model of dielectric breakdown, implemented in the defect-centric Ginestra® modeling platform, to deconvolute the intrinsic material properties effects and geometry feature impact on the gate oxide (GOx) and SiC-device breakdown.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-jbv5vq

Authors: Davide Cornigli, Holger Schlichting, Tom Becker, Luca Larcher, Johann Tobias Erlbacher, Milan Pesic

Institutions: Applied Materials (United States), Fraunhofer Institute for Integrated Systems and Device Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4401890359

FWCI: 0.206

Cites: 15

Cited by: 2

Related to: 10